BSZ040N06LS5
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ040N06LS5
Marking Code: 040N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 4.6
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TSDSON-8
BSZ040N06LS5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ040N06LS5
Datasheet (PDF)
..1. Size:1457K infineon
bsz040n06ls5.pdf
BSZ040N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Tab
6.1. Size:326K infineon
bsz040n04lsg.pdf
BSZ040N04LS GOptiMOS3 Power-TransistorProduct SummaryFeatures V 40 VDS Fast switching MOSFET for SMPS R 4.0mDS(on),max Optimized technology for DC/DC converters I 40 ADPG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
9.1. Size:447K infineon
bsz042n06ns.pdf
TypeBSZ042N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.2 mW Superior thermal resistanceID 40 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliantTSDSON
9.2. Size:475K infineon
bsz042n04nsg.pdf
BSZ042N04NS GProduct Summary 3 Power-TransistorV 40 VDSFeaturesR 4.2mWDS(on),max Fast switching MOSFET for SMPSI 40 AD Optimized technology for DC/DC convertersPG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
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