BSZ040N06LS5 MOSFET Datasheet: N-Ch, 60V, 17A. Full specification with pinout and replacement list

BSZ040N06LS5 Specs and Replacement

Type Designator: BSZ040N06LS5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TSDSON-8

BSZ040N06LS5 substitution

- MOSFET ⓘ Cross-Reference Search

BSZ040N06LS5 datasheet

..1. Size:1457K infineon
bsz040n06ls5.pdf pdf_icon

BSZ040N06LS5 MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Tab... See More ⇒

6.1. Size:326K infineon
bsz040n04lsg.pdf pdf_icon

BSZ040N04LS G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 4.0 m DS(on),max Optimized technology for DC/DC converters I 40 A D PG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S... See More ⇒

9.1. Size:447K infineon
bsz042n06ns.pdf pdf_icon

Type BSZ042N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 4.2 mW Superior thermal resistance ID 40 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant TSDSON... See More ⇒

9.2. Size:475K infineon
bsz042n04nsg.pdf pdf_icon

BSZ042N04NS G Product Summary 3 Power-Transistor V 40 V DS Features R 4.2 mW DS(on),max Fast switching MOSFET for SMPS I 40 A D Optimized technology for DC/DC converters PG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super... See More ⇒

Detailed specifications: BSZ017NE2LS5I, BSZ018N04LS6, BSZ021N04LS6, BSZ024N04LS6, BSZ031NE2LS5, BSZ033NE2LS5, BSZ037N06LS5, BSZ039N06NS, IRFB4115, BSZ0500NSI, BSZ0589NS, BSZ063N04LS6, BSZ065N06LS5, BSZ0703LS, BSZ070N08LS5, BSZ0909ND, BSZ0994NS