BSZ146N10LS5 PDF and Equivalents Search

 

BSZ146N10LS5 Specs and Replacement

Type Designator: BSZ146N10LS5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0146 Ohm

Package: TSDSON-8

BSZ146N10LS5 substitution

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BSZ146N10LS5 datasheet

 ..1. Size:1453K  infineon
bsz146n10ls5.pdf pdf_icon

BSZ146N10LS5

BSZ146N10LS5 MOSFET TSDSON-8 FL OptiMOSTM5 Power-Transistor, 100 V (enlarged source interconnection) Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) N-channel, Logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target app... See More ⇒

Detailed specifications: BSZ0589NS, BSZ063N04LS6, BSZ065N06LS5, BSZ0703LS, BSZ070N08LS5, BSZ0909ND, BSZ0994NS, BSZ099N06LS5, STP75NF75, BSZ300N15NS5, BTS247Z, IAUC100N10S5N040, IAUC120N04S6L008, IAUC120N04S6N009, IAUS180N04S4N015, IMW120R030M1H, IMW120R045M1

Keywords - BSZ146N10LS5 MOSFET specs

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