All MOSFET. BSZ146N10LS5 Datasheet

 

BSZ146N10LS5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ146N10LS5
   Marking Code: 146N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0146 Ohm
   Package: TSDSON-8

 BSZ146N10LS5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ146N10LS5 Datasheet (PDF)

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 bsz146n10ls5.pdf

BSZ146N10LS5 BSZ146N10LS5

BSZ146N10LS5MOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 100 V(enlarged source interconnection)Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) N-channel, Logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target app

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