All MOSFET. BSZ146N10LS5 Datasheet

 

BSZ146N10LS5 Datasheet and Replacement


   Type Designator: BSZ146N10LS5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0146 Ohm
   Package: TSDSON-8
 

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BSZ146N10LS5 Datasheet (PDF)

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BSZ146N10LS5

BSZ146N10LS5MOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 100 V(enlarged source interconnection)Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) N-channel, Logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target app

Datasheet: BSZ0589NS , BSZ063N04LS6 , BSZ065N06LS5 , BSZ0703LS , BSZ070N08LS5 , BSZ0909ND , BSZ0994NS , BSZ099N06LS5 , 12N60 , BSZ300N15NS5 , BTS247Z , IAUC100N10S5N040 , IAUC120N04S6L008 , IAUC120N04S6N009 , IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 .

History: IAUC100N10S5N040 | IRFP242R | IAUS180N04S4N015 | SVG041R2NL5 | PSMN1R5-40ES | IXFX80N60P3 | 2SK3483

Keywords - BSZ146N10LS5 MOSFET datasheet

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