IAUS180N04S4N015 MOSFET Datasheet: N-Ch, 40V, 180A. Full specification with pinout and replacement list

IAUS180N04S4N015 Specs and Replacement

Type Designator: IAUS180N04S4N015

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: HSOG-8

IAUS180N04S4N015 substitution

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IAUS180N04S4N015 datasheet

0.1. Size:207K infineon
iaus180n04s4n015.pdf pdf_icon

IAUS180N04S4N015 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 180 A Features PG-HSOG-8-1 N-channel - Enhancement mode Tab AEC qualified MSL1 up to 260 C peak reflow 8 1 Tab 175 C operating temperature Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IAUS180N04S4N015 P... See More ⇒

9.1. Size:314K infineon
iaus165n08s5n029.pdf pdf_icon

IAUS165N08S5N029 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 2.9 mW ID 165 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 8 175 C operating temperature 1 Tab Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking PG-HSOG-8-1 A08S5N29 ... See More ⇒

Detailed specifications: BSZ0994NS, BSZ099N06LS5, BSZ146N10LS5, BSZ300N15NS5, BTS247Z, IAUC100N10S5N040, IAUC120N04S6L008, IAUC120N04S6N009, K3569, IMW120R030M1H, IMW120R045M1, IMW120R060M1H, IMW120R090M1H, IMW120R140M1H, IMW120R220M1H, IMW120R350M1H, IMW65R027M1H