All MOSFET. IPA126N10NM3S Datasheet

 

IPA126N10NM3S Datasheet and Replacement


   Type Designator: IPA126N10NM3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0126 Ohm
   Package: TO220FP
 
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IPA126N10NM3S Datasheet (PDF)

 ..1. Size:1052K  infineon
 ipa126n10nm3s.pdf pdf_icon

IPA126N10NM3S

IPA126N10NM3SMOSFETPG-TO 220 FPOptiMOSTM 3 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

 4.1. Size:335K  infineon
 ipa126n10n3g.pdf pdf_icon

IPA126N10NM3S

IPA126N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 12.6 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq

Datasheet: IMZA65R072M1H , IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S , IPA083N10NM5S , SKD502T , IPA320N20NM3S , IPA600N25NM3S , IPA60R060C7 , IPA60R060P7 , IPA60R080P7 , IPA60R099C7 , IPA60R099P7 , IPA60R125CFD7 .

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