IPA320N20NM3S Specs and Replacement
Type Designator: IPA320N20NM3S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO220FP
IPA320N20NM3S substitution
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IPA320N20NM3S datasheet
ipa320n20nm3s.pdf
IPA320N20NM3S MOSFET PG-TO 220 FP OptiMOSTM 3 Power-Transistor, 200 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified... See More ⇒
Detailed specifications: IPA029N06NM5S, IPA040N06NM5S, IPA040N08NM5S, IPA050N10NM5S, IPA052N08NM5S, IPA060N06NM5S, IPA083N10NM5S, IPA126N10NM3S, SI2302, IPA600N25NM3S, IPA60R060C7, IPA60R060P7, IPA60R080P7, IPA60R099C7, IPA60R099P7, IPA60R125CFD7, IPA60R145CFD7
Keywords - IPA320N20NM3S MOSFET specs
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