IPA320N20NM3S Datasheet and Replacement
Type Designator: IPA320N20NM3S
Marking Code: 320N203S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 22 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO220FP
IPA320N20NM3S substitution
IPA320N20NM3S Datasheet (PDF)
ipa320n20nm3s.pdf

IPA320N20NM3SMOSFETPG-TO 220 FPOptiMOSTM 3 Power-Transistor, 200 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
Datasheet: IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S , IPA083N10NM5S , IPA126N10NM3S , IRFZ46N , IPA600N25NM3S , IPA60R060C7 , IPA60R060P7 , IPA60R080P7 , IPA60R099C7 , IPA60R099P7 , IPA60R125CFD7 , IPA60R145CFD7 .
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