IPAW70R950CE Datasheet and Replacement
Type Designator: IPAW70R950CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220FPWC
IPAW70R950CE substitution
IPAW70R950CE Datasheet (PDF)
ipaw70r950ce.pdf

IPAW70R950CEMOSFETPG - TO220 FullPAK WideCreepage700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market
ipaw70r600ce.pdf

IPAW70R600CEMOSFETPG - TO220 FullPAK WideCreepage700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market
Datasheet: IPAW60R180P7S , IPAW60R190CE , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IPAW60R600CE , IPAW60R600P7S , IPAW70R600CE , 7N65 , IPB017N10N5LF , IPB019N08N5 , IPB024N10N5 , IPB032N10N5 , IPB060N15N5 , IPB110P06LM , IPB120N03S4L-03 , IPB120N04S4-04 .
Keywords - IPAW70R950CE MOSFET datasheet
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