All MOSFET. IPAW70R950CE Datasheet

 

IPAW70R950CE MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPAW70R950CE
   Marking Code: 70S950CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.3 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220FPWC

 IPAW70R950CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPAW70R950CE Datasheet (PDF)

 ..1. Size:949K  infineon
 ipaw70r950ce.pdf

IPAW70R950CE IPAW70R950CE

IPAW70R950CEMOSFETPG - TO220 FullPAK WideCreepage700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 7.1. Size:994K  infineon
 ipaw70r600ce.pdf

IPAW70R950CE IPAW70R950CE

IPAW70R600CEMOSFETPG - TO220 FullPAK WideCreepage700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

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History: IXTP90N075T2 | IRFL014

 

 
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