IPAW70R950CE PDF and Equivalents Search

 

IPAW70R950CE Specs and Replacement

Type Designator: IPAW70R950CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO220FPWC

IPAW70R950CE substitution

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IPAW70R950CE datasheet

 ..1. Size:949K  infineon
 ipaw70r950ce.pdf pdf_icon

IPAW70R950CE

IPAW70R950CE MOSFET PG - TO220 FullPAK WideCreepage 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market... See More ⇒

 7.1. Size:994K  infineon
 ipaw70r600ce.pdf pdf_icon

IPAW70R950CE

IPAW70R600CE MOSFET PG - TO220 FullPAK WideCreepage 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market... See More ⇒

Detailed specifications: IPAW60R180P7S , IPAW60R190CE , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IPAW60R600CE , IPAW60R600P7S , IPAW70R600CE , 10N60 , IPB017N10N5LF , IPB019N08N5 , IPB024N10N5 , IPB032N10N5 , IPB060N15N5 , IPB110P06LM , IPB120N03S4L-03 , IPB120N04S4-04 .

Keywords - IPAW70R950CE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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