IPAW70R950CE MOSFET Datasheet: N-Ch, 700V, 7.4A. Full specification with pinout and replacement list

IPAW70R950CE Specs and Replacement

   Type Designator: IPAW70R950CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220FPWC

IPAW70R950CE substitution

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IPAW70R950CE datasheet

..1. Size:949K infineon
ipaw70r950ce.pdf pdf_icon

IPAW70R950CE MOSFET PG - TO220 FullPAK WideCreepage 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market... See More ⇒

7.1. Size:994K infineon
ipaw70r600ce.pdf pdf_icon

IPAW70R600CE MOSFET PG - TO220 FullPAK WideCreepage 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market... See More ⇒

Detailed specifications: IPAW60R180P7S , IPAW60R190CE , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IPAW60R600CE , IPAW60R600P7S , IPAW70R600CE , 10N60 , IPB017N10N5LF , IPB019N08N5 , IPB024N10N5 , IPB032N10N5 , IPB060N15N5 , IPB110P06LM , IPB120N03S4L-03 , IPB120N04S4-04 .