All MOSFET. STD17N05T4 Datasheet

 

STD17N05T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD17N05T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: DPAK

 STD17N05T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD17N05T4 Datasheet (PDF)

 ..1. Size:180K  1
 std17n05 std17n05-1 std17n05t4 std17n06 std17n06-1 std17n06t4.pdf

STD17N05T4 STD17N05T4

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

 6.1. Size:350K  1
 std17n05l-1 std17n06l-1 std17n05lt4 std17n06lt4.pdf

STD17N05T4 STD17N05T4

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 6.2. Size:350K  st
 std17n05l std17n06l.pdf

STD17N05T4 STD17N05T4

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 6.3. Size:180K  st
 std17n05.pdf

STD17N05T4 STD17N05T4

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

Datasheet: STD15N06L-1 , STD15N06LT4 , STD15N06T4 , STD17N05 , STD17N05-1 , STD17N05L , STD17N05L-1 , STD17N05LT4 , 5N50 , STD17N06 , STD17N06-1 , STD17N06L , STD17N06L-1 , STD17N06LT4 , STD17N06T4 , STD1NA60-1 , STD1NA60T4 .

 

 
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