IPB160N04S4L-H1 Datasheet. Specs and Replacement

Type Designator: IPB160N04S4L-H1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO263-7

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IPB160N04S4L-H1 datasheet

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IPB160N04S4L-H1

Data Sheet IPB160N04S4L-H1 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 160 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1 Ma... See More ⇒

 3.1. Size:122K  infineon
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IPB160N04S4L-H1

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1 ... See More ⇒

 3.2. Size:162K  infineon
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IPB160N04S4L-H1

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1... See More ⇒

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Detailed specifications: IPB110P06LM, IPB120N03S4L-03, IPB120N04S4-04, IPB120N04S4L-02, IPB120N08S4-03, IPB120N08S4-04, IPB120P04P4-04, IPB140N08S4-04, IRF1010E, IPB17N25S3-100, AUIRF1324L, AUIRF7734M2TR, AUIRF7749L2TR, AUIRF7759L2TR, AUIRF7769L2TR, AUIRF7799L2TR, AUIRF8736M2TR

Keywords - IPB160N04S4L-H1 MOSFET specs

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