IPB160N04S4L-H1 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB160N04S4L-H1
Marking Code: 4N04LH1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 160 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 146 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 1920 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0015 Ohm
Package: TO263-7
IPB160N04S4L-H1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB160N04S4L-H1 Datasheet (PDF)
0.1. ipb160n04s4l-h1.pdf 
Size:200K _infineon
Data Sheet IPB160N04S4L-H1OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.5mID 160 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB160N04S4L-H1 PG-TO263-7-3 4N04LH1Ma
3.1. ipb160n04s4-h1.pdf Size:122K _infineon
IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mWDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1
3.2. ipb160n04s4-h1 ds 1 0.pdf Size:162K _infineon
IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1
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