BSZ068N06NS PDF and Equivalents Search

 

BSZ068N06NS Specs and Replacement

Type Designator: BSZ068N06NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TSDSON-8

BSZ068N06NS substitution

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BSZ068N06NS datasheet

 ..1. Size:691K  infineon
bsz068n06ns.pdf pdf_icon

BSZ068N06NS

Type BSZ068N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 6.8 mW Superior thermal resistance ID 40 A N-channel QOSS nC 19 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant PG-TSD... See More ⇒

 9.1. Size:657K  infineon
bsz065n03ls.pdf pdf_icon

BSZ068N06NS

For BSZ065N03LS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 6.5 mW Very low FOMQOSS for High Frequency SMPS VGS=4.5 V 8.6 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V PG-TSDSON-8 (fu... See More ⇒

 9.2. Size:455K  infineon
bsz067n06ls3 bsz067n06ls3g.pdf pdf_icon

BSZ068N06NS

%* ! % TM #;B 1= &=- >5>?;= #=;0@/? %@9 9 -=D Features D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 7 m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D DE2?46 , D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D R... See More ⇒

 9.3. Size:1511K  infineon
bsz063n04ls6.pdf pdf_icon

BSZ068N06NS

BSZ063N04LS6 MOSFET TSDSON-8 FL OptiMOSTM 6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord... See More ⇒

Detailed specifications: BSC012N06NS, BSC025N08LS5, BSC027N10NS5, BSC037N08NS5T, BSC079N03LSCG, BSC220N20NSFD, BSG0810NDI, BSZ018NE2LSI, AON7506, BSZ100N06NS, BSZ15DC02KDH, BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11

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