BSZ068N06NS - описание и поиск аналогов

Type BSZ068N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 6.8 mW Superior thermal resistance ID 40 A N-channel QOSS nC 19 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant PG-TSD

For BSZ065N03LS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 6.5 mW Very low FOMQOSS for High Frequency SMPS VGS=4.5 V 8.6 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V PG-TSDSON-8 (fu

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BSZ063N04LS6 MOSFET TSDSON-8 FL OptiMOSTM 6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

BSZ065N06LS5 MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Tab

For BSZ060NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter (Server,VGA) Very Low FOMQOSS for High Frequency SMPS RDS(on),max VGS=10 V 6 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 8.1 Excellent gate charge x R product (FOM) ID 40 A DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS PG-TSDSON-