All MOSFET. BSZ215CH Datasheet

 

BSZ215CH Datasheet and Replacement


   Type Designator: BSZ215CH
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSDSON-8
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BSZ215CH Datasheet (PDF)

 ..1. Size:324K  infineon
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BSZ215CH

BSZ215C HOptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 55 Super Logic level (2.5V rated) mW VGS=2.5 V 310 95 Common drainID -3.2 5.1 A Avalanche rated 175 C operating temperature Qualified according to AEC Q101 100% lead-

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History: BSO080P03NS3G | NCE60P05BY | SIHFIB6N60A | 2SK1152L | BSF053N03LTG | PHP36N06E | IPB60R280P6

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