BSZ215CH MOSFET Datasheet: NP-Ch, 20V, 5.1A. Full specification with pinout and replacement list

BSZ215CH Specs and Replacement

Type Designator: BSZ215CH

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSDSON-8

BSZ215CH substitution

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BSZ215CH datasheet

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BSZ215C H OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel VDS -20 20 V Enhancement mode RDS(on),max VGS= 4.5 V 150 55 Super Logic level (2.5V rated) mW VGS= 2.5 V 310 95 Common drain ID -3.2 5.1 A Avalanche rated 175 C operating temperature Qualified according to AEC Q101 100% lead-... See More ⇒

Detailed specifications: BSC079N03LSCG, BSC220N20NSFD, BSG0810NDI, BSZ018NE2LSI, BSZ068N06NS, BSZ100N06NS, BSZ15DC02KDH, BSZ160N10NS3, AO4407, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11, IAUA120N04S5N014, IAUA180N04S5N012, IAUA200N04S5N010, IAUC100N04S6L014