All MOSFET. DF11MR12W1M1PB11 Datasheet

 

DF11MR12W1M1PB11 Datasheet and Replacement


   Type Designator: DF11MR12W1M1PB11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: MODULE
 

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DF11MR12W1M1PB11 Datasheet (PDF)

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 df11mr12w1m1p b11.pdf pdf_icon

DF11MR12W1M1PB11

DF11MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 50A / I = 100AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

Datasheet: BSC220N20NSFD , BSG0810NDI , BSZ018NE2LSI , BSZ068N06NS , BSZ100N06NS , BSZ15DC02KDH , BSZ160N10NS3 , BSZ215CH , BS170 , DF23MR12W1M1PB11 , F3L15MR12W2M1B69 , FF45MR12W1M1B11 , IAUA120N04S5N014 , IAUA180N04S5N012 , IAUA200N04S5N010 , IAUC100N04S6L014 , IAUC100N04S6L020 .

Keywords - DF11MR12W1M1PB11 MOSFET datasheet

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