DF11MR12W1M1PB11 PDF and Equivalents Search

 

DF11MR12W1M1PB11 Specs and Replacement

Type Designator: DF11MR12W1M1PB11

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: MODULE

DF11MR12W1M1PB11 substitution

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DF11MR12W1M1PB11 datasheet

 1.1. Size:512K  infineon
 df11mr12w1m1p b11.pdf pdf_icon

DF11MR12W1M1PB11

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Detailed specifications: BSC220N20NSFD, BSG0810NDI, BSZ018NE2LSI, BSZ068N06NS, BSZ100N06NS, BSZ15DC02KDH, BSZ160N10NS3, BSZ215CH, BS170, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11, IAUA120N04S5N014, IAUA180N04S5N012, IAUA200N04S5N010, IAUC100N04S6L014, IAUC100N04S6L020

Keywords - DF11MR12W1M1PB11 MOSFET specs

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