All MOSFET. F3L15MR12W2M1B69 Datasheet

 

F3L15MR12W2M1B69 MOSFET. Datasheet pdf. Equivalent


   Type Designator: F3L15MR12W2M1B69
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.55 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 186 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: MODULE

 F3L15MR12W2M1B69 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F3L15MR12W2M1B69 Datasheet (PDF)

 1.1. Size:547K  infineon
f3l15mr12w2m1 b69.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

F3L15MR12W2M1_B69EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 75A / I = 150AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler

 9.1. Size:1463K  infineon
f3l15r12w2h3-b27.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

Technische Information / Technical InformationIGBT-ModuleF3L15R12W2H3_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

 9.2. Size:777K  infineon
f3l150r07w2e3 b11.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic

 9.3. Size:1158K  infineon
f3l150r12w2h3 b11.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

/ Technical InformationIGBT-F3L150R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRM

 9.4. Size:830K  infineon
f3l150r07w2e3-b11.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic

 9.5. Size:1630K  infineon
f3l15r12w2h3 b27.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

/ Technical InformationIGBT-F3L15R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo

 9.6. Size:996K  infineon
f3l150r12w2h3-b11.pdf

F3L15MR12W2M1B69
F3L15MR12W2M1B69

Technische Information / Technical InformationIGBT-ModulF3L150R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top