All MOSFET. F3L15MR12W2M1B69 Datasheet

 

F3L15MR12W2M1B69 MOSFET. Datasheet pdf. Equivalent


   Type Designator: F3L15MR12W2M1B69
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.55 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 186 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: MODULE

 F3L15MR12W2M1B69 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F3L15MR12W2M1B69 Datasheet (PDF)

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