All MOSFET. FF45MR12W1M1B11 Datasheet

 

FF45MR12W1M1B11 Datasheet and Replacement


   Type Designator: FF45MR12W1M1B11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: MODULE
 

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FF45MR12W1M1B11 Datasheet (PDF)

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FF45MR12W1M1B11

FF45MR12W1M1_B11EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC c

Datasheet: BSZ068N06NS , BSZ100N06NS , BSZ15DC02KDH , BSZ160N10NS3 , BSZ215CH , DF11MR12W1M1PB11 , DF23MR12W1M1PB11 , F3L15MR12W2M1B69 , P0903BDG , IAUA120N04S5N014 , IAUA180N04S5N012 , IAUA200N04S5N010 , IAUC100N04S6L014 , IAUC100N04S6L020 , IAUC100N04S6L025 , IAUC100N04S6N015 , IAUC100N04S6N022 .

History: AP4543GEH-HF | NCE60N1K0I

Keywords - FF45MR12W1M1B11 MOSFET datasheet

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