FF45MR12W1M1B11 PDF and Equivalents Search

 

FF45MR12W1M1B11 Specs and Replacement

Type Designator: FF45MR12W1M1B11

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: MODULE

FF45MR12W1M1B11 substitution

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FF45MR12W1M1B11 datasheet

 2.1. Size:434K  infineon
 ff45mr12w1m1 b11.pdf pdf_icon

FF45MR12W1M1B11

FF45MR12W1M1_B11 EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTC EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC Vorl ufige Daten / Preliminary Data J V = 1200V DSS I = 25A / I = 50A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC c... See More ⇒

Detailed specifications: BSZ068N06NS, BSZ100N06NS, BSZ15DC02KDH, BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, IRF1407, IAUA120N04S5N014, IAUA180N04S5N012, IAUA200N04S5N010, IAUC100N04S6L014, IAUC100N04S6L020, IAUC100N04S6L025, IAUC100N04S6N015, IAUC100N04S6N022

Keywords - FF45MR12W1M1B11 MOSFET specs

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