IAUA200N04S5N010 Specs and Replacement
Type Designator: IAUA200N04S5N010
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: HSOF-5
IAUA200N04S5N010 substitution
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IAUA200N04S5N010 datasheet
iaua200n04s5n010.pdf
IAUA200N04S5N010 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1 mW ID 200 A Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260 C peak reflow 1 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1 2... See More ⇒
Detailed specifications: BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11, IAUA120N04S5N014, IAUA180N04S5N012, 5N60, IAUC100N04S6L014, IAUC100N04S6L020, IAUC100N04S6L025, IAUC100N04S6N015, IAUC100N04S6N022, IAUC100N04S6N028, IAUC100N08S5N043, IAUC100N10S5L040
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IAUA200N04S5N010 substitution
IAUA200N04S5N010 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK1365 | BRI7N60 | SWF13N80K | 2SK1180 | 2SK1274 | BM2300 | ZXMHC3F381N8
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