IAUA200N04S5N010 PDF and Equivalents Search

 

IAUA200N04S5N010 Specs and Replacement

Type Designator: IAUA200N04S5N010

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: HSOF-5

IAUA200N04S5N010 substitution

- MOSFET ⓘ Cross-Reference Search

 

IAUA200N04S5N010 datasheet

 0.1. Size:671K  infineon
iaua200n04s5n010.pdf pdf_icon

IAUA200N04S5N010

IAUA200N04S5N010 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1 mW ID 200 A Features PG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260 C peak reflow 1 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested 1 2... See More ⇒

Detailed specifications: BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11, IAUA120N04S5N014, IAUA180N04S5N012, 5N60, IAUC100N04S6L014, IAUC100N04S6L020, IAUC100N04S6L025, IAUC100N04S6N015, IAUC100N04S6N022, IAUC100N04S6N028, IAUC100N08S5N043, IAUC100N10S5L040

Keywords - IAUA200N04S5N010 MOSFET specs

 IAUA200N04S5N010 cross reference

 IAUA200N04S5N010 equivalent finder

 IAUA200N04S5N010 pdf lookup

 IAUA200N04S5N010 substitution

 IAUA200N04S5N010 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.