All MOSFET. IAUA200N04S5N010 Datasheet

 

IAUA200N04S5N010 Datasheet and Replacement


   Type Designator: IAUA200N04S5N010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: HSOF-5
 

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IAUA200N04S5N010 Datasheet (PDF)

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IAUA200N04S5N010

IAUA200N04S5N010OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1mWID 200 AFeaturesPG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260C peak reflow1 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested12

Datasheet: BSZ160N10NS3 , BSZ215CH , DF11MR12W1M1PB11 , DF23MR12W1M1PB11 , F3L15MR12W2M1B69 , FF45MR12W1M1B11 , IAUA120N04S5N014 , IAUA180N04S5N012 , 13N50 , IAUC100N04S6L014 , IAUC100N04S6L020 , IAUC100N04S6L025 , IAUC100N04S6N015 , IAUC100N04S6N022 , IAUC100N04S6N028 , IAUC100N08S5N043 , IAUC100N10S5L040 .

History: NCE0102 | GSM3402A | GP1M018A020XX | WMM10N65EM | 3N70L-TM3-T | AP4034GYT-HF-3 | NCE40P07S

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