All MOSFET. IAUA200N04S5N010 Datasheet

 

IAUA200N04S5N010 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUA200N04S5N010
   Marking Code: 5N04N010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 99 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: HSOF-5

 IAUA200N04S5N010 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUA200N04S5N010 Datasheet (PDF)

 0.1. Size:671K  infineon
 iaua200n04s5n010.pdf

IAUA200N04S5N010 IAUA200N04S5N010

IAUA200N04S5N010OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1mWID 200 AFeaturesPG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260C peak reflow1 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested12

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMB140NV6LG4 | GSM4447

 

 
Back to Top