All MOSFET. IAUA200N04S5N010 Datasheet

 

IAUA200N04S5N010 Datasheet and Replacement


   Type Designator: IAUA200N04S5N010
   Marking Code: 5N04N010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 99 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: HSOF-5
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IAUA200N04S5N010 Datasheet (PDF)

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IAUA200N04S5N010

IAUA200N04S5N010OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1mWID 200 AFeaturesPG-HSOF-5 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL3 up to 260C peak reflow1 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested12

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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