IAUC28N08S5L230 Specs and Replacement
Type Designator: IAUC28N08S5L230
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 118 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TDSON-8
IAUC28N08S5L230 substitution
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IAUC28N08S5L230 datasheet
iauc28n08s5l230.pdf
IAUC28N08S5L230 OptiMOS -5 Power-Transistor Product Summary VDS 80 V Features RDS(on) 23 mW OptiMOS - power MOSFET for automotive applications ID 28 A N-channel - Enhancement mode - Logic Level MSL1 up to 260 C peak reflow PG-TDSON-8 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested 1 Quality Features Infineon Au... See More ⇒
iauc24n10s5l300.pdf
IAUC24N10S5L300 OptiMOSTM-5 Power-Transistor Product Summary VDS 100 V RDS(on) 30 mW ID 24 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 Green product (RoHS compliant) 1 100% Avalanche tested Feasible for automatic optical inspe... See More ⇒
Detailed specifications: IAUC100N04S6N028, IAUC100N08S5N043, IAUC100N10S5L040, IAUC120N04S6L009, IAUC120N04S6L012, IAUC120N04S6N010, IAUC120N04S6N013, IAUC24N10S5L300, AO3400A, IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023
Keywords - IAUC28N08S5L230 MOSFET specs
IAUC28N08S5L230 cross reference
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IAUC28N08S5L230 replacement
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History: MS12N60 | JMSH0602AG | HY3210M | RZQ045P01TR
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