All MOSFET. IAUC28N08S5L230 Datasheet

 

IAUC28N08S5L230 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUC28N08S5L230
   Marking Code: 5N08L230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.6 nC
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TDSON-8

 IAUC28N08S5L230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUC28N08S5L230 Datasheet (PDF)

 0.1. Size:881K  infineon
 iauc28n08s5l230.pdf

IAUC28N08S5L230 IAUC28N08S5L230

IAUC28N08S5L230OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VFeaturesRDS(on) 23mW OptiMOS - power MOSFET for automotive applicationsID 28 A N-channel - Enhancement mode - Logic Level MSL1 up to 260C peak reflowPG-TDSON-8 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested1Quality Features Infineon Au

 9.1. Size:783K  infineon
 iauc24n10s5l300.pdf

IAUC28N08S5L230 IAUC28N08S5L230

IAUC24N10S5L300OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 30mWID 24 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic level AEC Q101 qualified MSL1 up to 260C peak reflow1 Green product (RoHS compliant)1 100% Avalanche tested Feasible for automatic optical inspe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MDD1051RH

 

 
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