IAUC60N04S6L039 MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

IAUC60N04S6L039 Specs and Replacement

Type Designator: IAUC60N04S6L039

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 259 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00402 Ohm

Package: TDSON-8

IAUC60N04S6L039 substitution

- MOSFET ⓘ Cross-Reference Search

IAUC60N04S6L039 datasheet

0.1. Size:665K infineon
iauc60n04s6l039.pdf pdf_icon

IAUC60N04S6L039 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.0 mW ID 60 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

3.1. Size:666K infineon
iauc60n04s6n044.pdf pdf_icon

IAUC60N04S6N044 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.5 mW ID 60 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

Detailed specifications: IAUC100N08S5N043, IAUC100N10S5L040, IAUC120N04S6L009, IAUC120N04S6L012, IAUC120N04S6N010, IAUC120N04S6N013, IAUC24N10S5L300, IAUC28N08S5L230, IRFB31N20D, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019