IAUC80N04S6N036 MOSFET Datasheet: N-Ch, 40V, 80A. Full specification with pinout and replacement list

IAUC80N04S6N036 Specs and Replacement

Type Designator: IAUC80N04S6N036

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 326 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00368 Ohm

Package: TDSON-8

IAUC80N04S6N036 substitution

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IAUC80N04S6N036 datasheet

0.1. Size:665K infineon
iauc80n04s6n036.pdf pdf_icon

IAUC80N04S6N036 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.6 mW ID 80 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

3.1. Size:665K infineon
iauc80n04s6l032.pdf pdf_icon

IAUC80N04S6L032 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.2 mW ID 80 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

Detailed specifications: IAUC120N04S6N010, IAUC120N04S6N013, IAUC24N10S5L300, IAUC28N08S5L230, IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IRFZ48N, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1