IAUS165N08S5N029 MOSFET Datasheet: N-Ch, 80V, 165A. Full specification with pinout and replacement list

IAUS165N08S5N029 Specs and Replacement

Type Designator: IAUS165N08S5N029

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 165 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: HSOG-8-1

IAUS165N08S5N029 substitution

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IAUS165N08S5N029 datasheet

0.1. Size:314K infineon
iaus165n08s5n029.pdf pdf_icon

IAUS165N08S5N029 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 2.9 mW ID 165 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 8 175 C operating temperature 1 Tab Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking PG-HSOG-8-1 A08S5N29 ... See More ⇒

9.1. Size:207K infineon
iaus180n04s4n015.pdf pdf_icon

IAUS180N04S4N015 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 180 A Features PG-HSOG-8-1 N-channel - Enhancement mode Tab AEC qualified MSL1 up to 260 C peak reflow 8 1 Tab 175 C operating temperature Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IAUS180N04S4N015 P... See More ⇒

Detailed specifications: IAUC24N10S5L300, IAUC28N08S5L230, IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IRF830, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, IGOT60R070D1