All MOSFET. IAUS165N08S5N029 Datasheet

 

IAUS165N08S5N029 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUS165N08S5N029
   Marking Code: A08S5N29
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 165 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: HSOG-8-1

 IAUS165N08S5N029 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUS165N08S5N029 Datasheet (PDF)

 0.1. Size:314K  infineon
 iaus165n08s5n029.pdf

IAUS165N08S5N029 IAUS165N08S5N029

IAUS165N08S5N029OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VRDS(on) 2.9mWID 165 AFeatures N-channel - Enhancement mode PG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow8 175C operating temperature1 Tab Green product (RoHS compliant)1 Ultra low Rds(on)8 100% Avalanche testedType Package MarkingPG-HSOG-8-1 A08S5N29

 9.1. Size:207K  infineon
 iaus180n04s4n015.pdf

IAUS165N08S5N029 IAUS165N08S5N029

IAUS180N04S4N015OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.5mID 180 AFeaturesPG-HSOG-8-1 N-channel - Enhancement modeTab AEC qualified MSL1 up to 260C peak reflow81 Tab 175C operating temperature Green product (RoHS compliant)1 Ultra low Rds(on) 8 100% Avalanche testedType Package MarkingIAUS180N04S4N015 P

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE65NF190LL

 

 
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