All MOSFET. IAUS200N08S5N023 Datasheet

 

IAUS200N08S5N023 Datasheet and Replacement


   Type Designator: IAUS200N08S5N023
   Marking Code: A08S5N23
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: HSOG-8-1
 

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IAUS200N08S5N023 Datasheet (PDF)

 0.1. Size:380K  infineon
 iaus200n08s5n023.pdf pdf_icon

IAUS200N08S5N023

IAUS200N08S5N023OptiMOS-5 Power-TransistorProduct Summary VDS 80 V RDS(on) 2.3 mW ID 200 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow 175C operating temperature8 Green product (RoHS compliant) Ultra low Rds(on)1 Drain 100% Avalanche testedTabGateType Package Marking pin

 9.1. Size:382K  infineon
 iaus240n08s5n019.pdf pdf_icon

IAUS200N08S5N023

IAUS240N08S5N019OptiMOS-5 Power-TransistorProduct Summary VDS 80 V RDS(on) 1.9 mW ID 240 A Features N-channel - Enhancement modePG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow 175C operating temperature8 Green product (RoHS compliant) Ultra low Rds(on)1 Drain 100% Avalanche testedTabGateType Package Marking pi

Datasheet: IAUC28N08S5L230 , IAUC60N04S6L039 , IAUC60N04S6N044 , IAUC70N08S5N074 , IAUC80N04S6L032 , IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 , 60N06 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 .

History: JCS40N25SC

Keywords - IAUS200N08S5N023 MOSFET datasheet

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