IAUS200N08S5N023 MOSFET Datasheet: N-Ch, 80V, 200A. Full specification with pinout and replacement list

IAUS200N08S5N023 Specs and Replacement

Type Designator: IAUS200N08S5N023

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: HSOG-8-1

IAUS200N08S5N023 substitution

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IAUS200N08S5N023 datasheet

0.1. Size:380K infineon
iaus200n08s5n023.pdf pdf_icon

IAUS200N08S5N023 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 2.3 mW ID 200 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 175 C operating temperature 8 Green product (RoHS compliant) Ultra low Rds(on) 1 Drain 100% Avalanche tested Tab Gate Type Package Marking pin... See More ⇒

9.1. Size:382K infineon
iaus240n08s5n019.pdf pdf_icon

IAUS240N08S5N019 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 1.9 mW ID 240 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 175 C operating temperature 8 Green product (RoHS compliant) Ultra low Rds(on) 1 Drain 100% Avalanche tested Tab Gate Type Package Marking pi... See More ⇒

Detailed specifications: IAUC28N08S5L230, IAUC60N04S6L039, IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IRLB3034, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, IGOT60R070D1, IGT60R070D1