All MOSFET. IAUS200N08S5N023 Datasheet

 

IAUS200N08S5N023 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUS200N08S5N023
   Marking Code: A08S5N23
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: HSOG-8-1

 IAUS200N08S5N023 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUS200N08S5N023 Datasheet (PDF)

 0.1. Size:380K  infineon
 iaus200n08s5n023.pdf

IAUS200N08S5N023 IAUS200N08S5N023

IAUS200N08S5N023OptiMOS-5 Power-TransistorProduct Summary VDS 80 V RDS(on) 2.3 mW ID 200 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow 175C operating temperature8 Green product (RoHS compliant) Ultra low Rds(on)1 Drain 100% Avalanche testedTabGateType Package Marking pin

 9.1. Size:382K  infineon
 iaus240n08s5n019.pdf

IAUS200N08S5N023 IAUS200N08S5N023

IAUS240N08S5N019OptiMOS-5 Power-TransistorProduct Summary VDS 80 V RDS(on) 1.9 mW ID 240 A Features N-channel - Enhancement modePG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow 175C operating temperature8 Green product (RoHS compliant) Ultra low Rds(on)1 Drain 100% Avalanche testedTabGateType Package Marking pi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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