All MOSFET. IAUS300N08S5N014 Datasheet

 

IAUS300N08S5N014 Datasheet and Replacement


   Type Designator: IAUS300N08S5N014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1626 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: HSOG-8-1
 

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IAUS300N08S5N014 Datasheet (PDF)

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IAUS300N08S5N014

IAUS300N08S5N014OptiMOS-5 Power-TransistorProduct Summary VDS 80 V RDS(on) 1.4 mW ID 300 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow 175C operating temperature8 Green product (RoHS compliant) Ultra low Rds(on)1 Drain 100% Avalanche testedTabGateType Package Marking pi

Datasheet: IAUC60N04S6N044 , IAUC70N08S5N074 , IAUC80N04S6L032 , IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IRFB7545 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S .

History: IAUS165N08S5N029

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