IAUS300N08S5N014 PDF and Equivalents Search

 

IAUS300N08S5N014 Specs and Replacement

Type Designator: IAUS300N08S5N014

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1626 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: HSOG-8-1

IAUS300N08S5N014 substitution

- MOSFET ⓘ Cross-Reference Search

 

IAUS300N08S5N014 datasheet

 0.1. Size:380K  infineon
 iaus300n08s5n014.pdf pdf_icon

IAUS300N08S5N014

IAUS300N08S5N014 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 1.4 mW ID 300 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualified Tab MSL1 up to 260 C peak reflow 175 C operating temperature 8 Green product (RoHS compliant) Ultra low Rds(on) 1 Drain 100% Avalanche tested Tab Gate Type Package Marking pi... See More ⇒

Detailed specifications: IAUC60N04S6N044, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IRFB7545, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, IGOT60R070D1, IGT60R070D1, IGT60R190D1S, IPA60R180P7S

Keywords - IAUS300N08S5N014 MOSFET specs

 IAUS300N08S5N014 cross reference

 IAUS300N08S5N014 equivalent finder

 IAUS300N08S5N014 pdf lookup

 IAUS300N08S5N014 substitution

 IAUS300N08S5N014 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.