All MOSFET. IAUS300N08S5N014 Datasheet

 

IAUS300N08S5N014 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUS300N08S5N014
   Marking Code: A08S5N14
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 300 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 144 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1626 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: HSOG-8-1

 IAUS300N08S5N014 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUS300N08S5N014 Datasheet (PDF)

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 iaus300n08s5n014.pdf

IAUS300N08S5N014 IAUS300N08S5N014

IAUS300N08S5N014OptiMOS-5 Power-TransistorProduct Summary VDS 80 V RDS(on) 1.4 mW ID 300 A Features N-channel - Enhancement mode PG-HSOG-8-1 AEC qualifiedTab MSL1 up to 260C peak reflow 175C operating temperature8 Green product (RoHS compliant) Ultra low Rds(on)1 Drain 100% Avalanche testedTabGateType Package Marking pi

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