All MOSFET. IGLD60R070D1 Datasheet

 

IGLD60R070D1 Datasheet and Replacement


   Type Designator: IGLD60R070D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: LSON-8-1
 

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IGLD60R070D1 Datasheet (PDF)

 ..1. Size:507K  infineon
 igld60r070d1.pdf pdf_icon

IGLD60R070D1

IGLD60R070D1IGLD60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge GSK Capable of reverse conduction SS Low gate charge, low output charge DD Superior commutation ruggedness DD Qualified for industrial applications accor

 7.1. Size:494K  infineon
 igld60r190d1.pdf pdf_icon

IGLD60R070D1

IGLD60R190D1IGLD60R190D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge GSK Capable of reverse conduction SS Low gate charge, low output charge DD Superior commutation ruggedness DD Qualified for industrial applications accor

Datasheet: IAUC80N04S6L032 , IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , K2611 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S .

History: IAUS165N08S5N029

Keywords - IGLD60R070D1 MOSFET datasheet

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