IGLD60R070D1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IGLD60R070D1
   Marking Code: 60R070D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: LSON-8-1

IGLD60R070D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS