All MOSFET. IGLD60R190D1 Datasheet

 

IGLD60R190D1 Datasheet and Replacement


   Type Designator: IGLD60R190D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: LSON-8-1
 

 IGLD60R190D1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IGLD60R190D1 Datasheet (PDF)

 ..1. Size:494K  infineon
 igld60r190d1.pdf pdf_icon

IGLD60R190D1

IGLD60R190D1IGLD60R190D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge GSK Capable of reverse conduction SS Low gate charge, low output charge DD Superior commutation ruggedness DD Qualified for industrial applications accor

 7.1. Size:507K  infineon
 igld60r070d1.pdf pdf_icon

IGLD60R190D1

IGLD60R070D1IGLD60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge GSK Capable of reverse conduction SS Low gate charge, low output charge DD Superior commutation ruggedness DD Qualified for industrial applications accor

Datasheet: IAUC80N04S6N036 , IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , 2SK3918 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE .

History: UT110N03

Keywords - IGLD60R190D1 MOSFET datasheet

 IGLD60R190D1 cross reference
 IGLD60R190D1 equivalent finder
 IGLD60R190D1 lookup
 IGLD60R190D1 substitution
 IGLD60R190D1 replacement

 

 
Back to Top

 


 
.