IGLD60R190D1 PDF and Equivalents Search

 

IGLD60R190D1 Specs and Replacement

Type Designator: IGLD60R190D1

Type of Transistor: GaN

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: LSON-8-1

IGLD60R190D1 substitution

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IGLD60R190D1 datasheet

 ..1. Size:494K  infineon
 igld60r190d1.pdf pdf_icon

IGLD60R190D1

IGLD60R190D1 IGLD60R190D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction S S Low gate charge, low output charge D D Superior commutation ruggedness D D Qualified for industrial applications accor... See More ⇒

 7.1. Size:507K  infineon
 igld60r070d1.pdf pdf_icon

IGLD60R190D1

IGLD60R070D1 IGLD60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction S S Low gate charge, low output charge D D Superior commutation ruggedness D D Qualified for industrial applications accor... See More ⇒

Detailed specifications: IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, EMB04N03H, IGO60R070D1, IGOT60R070D1, IGT60R070D1, IGT60R190D1S, IPA60R180P7S, IPA60R360P7S, IPAN60R180P7S, IPAN65R650CE

Keywords - IGLD60R190D1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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