All MOSFET. IGLD60R190D1 Datasheet

 

IGLD60R190D1 Datasheet and Replacement


   Type Designator: IGLD60R190D1
   Marking Code: 60R190D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.2 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: LSON-8-1
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IGLD60R190D1 Datasheet (PDF)

 ..1. Size:494K  infineon
 igld60r190d1.pdf pdf_icon

IGLD60R190D1

IGLD60R190D1IGLD60R190D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge GSK Capable of reverse conduction SS Low gate charge, low output charge DD Superior commutation ruggedness DD Qualified for industrial applications accor

 7.1. Size:507K  infineon
 igld60r070d1.pdf pdf_icon

IGLD60R190D1

IGLD60R070D1IGLD60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge GSK Capable of reverse conduction SS Low gate charge, low output charge DD Superior commutation ruggedness DD Qualified for industrial applications accor

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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