IGO60R070D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: IGO60R070D1
Marking Code: 60R070D1
Type of Transistor: GaN
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.6 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5.8 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 72 pF
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: DSO-20-85
IGO60R070D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IGO60R070D1 Datasheet (PDF)
0.1. igo60r070d1.pdf 
Size:527K _infineon
IGO60R070D1IGO60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 1 No reverse-recovery charge 20 20 10 Capable of reverse conduction Low gate charge, low output charge 11 1 Superior commutation ruggedness 11 Qualified for industrial applications a
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
