IGO60R070D1 Datasheet and Replacement
Type Designator: IGO60R070D1
Type of Transistor: GaN
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: DSO-20-85
IGO60R070D1 substitution
IGO60R070D1 Datasheet (PDF)
igo60r070d1.pdf

IGO60R070D1IGO60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 1 No reverse-recovery charge 20 20 10 Capable of reverse conduction Low gate charge, low output charge 11 1 Superior commutation ruggedness 11 Qualified for industrial applications a
Datasheet: IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , MMD60R360PRH , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 .
History: IPB16CN10NG | BSC160N15NS5 | 3SK108 | 2SK3644-01
Keywords - IGO60R070D1 MOSFET datasheet
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History: IPB16CN10NG | BSC160N15NS5 | 3SK108 | 2SK3644-01



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