All MOSFET. IGO60R070D1 Datasheet

 

IGO60R070D1 Datasheet and Replacement


   Type Designator: IGO60R070D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DSO-20-85
 

 IGO60R070D1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IGO60R070D1 Datasheet (PDF)

 ..1. Size:527K  infineon
 igo60r070d1.pdf pdf_icon

IGO60R070D1

IGO60R070D1IGO60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 1 No reverse-recovery charge 20 20 10 Capable of reverse conduction Low gate charge, low output charge 11 1 Superior commutation ruggedness 11 Qualified for industrial applications a

Datasheet: IAUC90N10S5N062 , IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , MMD60R360PRH , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 .

History: SSM20P02GH

Keywords - IGO60R070D1 MOSFET datasheet

 IGO60R070D1 cross reference
 IGO60R070D1 equivalent finder
 IGO60R070D1 lookup
 IGO60R070D1 substitution
 IGO60R070D1 replacement

 

 
Back to Top

 


 
.