All MOSFET. IGO60R070D1 Datasheet


IGO60R070D1 MOSFET. Datasheet pdf. Equivalent

Type Designator: IGO60R070D1

Marking Code: 60R070D1

Type of Transistor: GaN

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.6 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 5.8 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 72 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: DSO-20-85

IGO60R070D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IGO60R070D1 Datasheet (PDF)

0.1. igo60r070d1.pdf Size:527K _infineon


IGO60R070D1IGO60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 1 No reverse-recovery charge 20 20 10 Capable of reverse conduction Low gate charge, low output charge 11 1 Superior commutation ruggedness 11 Qualified for industrial applications a

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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