IGOT60R070D1 Specs and Replacement
Type Designator: IGOT60R070D1
Type of Transistor: GaN
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: DSO-20-87
IGOT60R070D1 substitution
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IGOT60R070D1 datasheet
igot60r070d1.pdf
IGOT60R070D1 IGOT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 20 No reverse-recovery charge 1 11 Capable of reverse conduction 1 Low gate charge, low output charge 10 20 Superior commutation ruggedness 10 11 Qualified for industrial applic... See More ⇒
Detailed specifications: IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, MMIS60R580P, IGT60R070D1, IGT60R190D1S, IPA60R180P7S, IPA60R360P7S, IPAN60R180P7S, IPAN65R650CE, IPB015N04N6, IPB08CN10NG
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