All MOSFET. IGOT60R070D1 Datasheet

 

IGOT60R070D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IGOT60R070D1
   Marking Code: 60R070D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DSO-20-87

 IGOT60R070D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IGOT60R070D1 Datasheet (PDF)

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 igot60r070d1.pdf

IGOT60R070D1 IGOT60R070D1

IGOT60R070D1IGOT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 20 No reverse-recovery charge 1 11 Capable of reverse conduction 1 Low gate charge, low output charge 1020 Superior commutation ruggedness 10 11 Qualified for industrial applic

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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