All MOSFET. IGOT60R070D1 Datasheet

 

IGOT60R070D1 Datasheet and Replacement


   Type Designator: IGOT60R070D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DSO-20-87
 

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IGOT60R070D1 Datasheet (PDF)

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IGOT60R070D1

IGOT60R070D1IGOT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching 20 No reverse-recovery charge 1 11 Capable of reverse conduction 1 Low gate charge, low output charge 1020 Superior commutation ruggedness 10 11 Qualified for industrial applic

Datasheet: IAUS165N08S5N029 , IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , MMIS60R580P , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG .

History: FC694301 | TDM3405 | SMF10N65 | FC4B22180L | IRLR8721PBF | SMD7N65 | VSE009NE6MS-G

Keywords - IGOT60R070D1 MOSFET datasheet

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