All MOSFET. IGT60R190D1S Datasheet

 

IGT60R190D1S Datasheet and Replacement


   Type Designator: IGT60R190D1S
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: HSOF-8-3
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IGT60R190D1S Datasheet (PDF)

 ..1. Size:544K  infineon
 igt60r190d1s.pdf pdf_icon

IGT60R190D1S

IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching G No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 1 Superior commutation ruggedness 1 1 Qualified for standard grade application

 8.1. Size:537K  infineon
 igt60r070d1.pdf pdf_icon

IGT60R190D1S

IGT60R070D1IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 Superior commutation ruggedness 1 Qualified for industrial applications according to JE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | AP6679GI-HF | DM12N65C | SPD04N60S5 | FCPF7N60YDTU | NTD4855N-1G

Keywords - IGT60R190D1S MOSFET datasheet

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