All MOSFET. IGT60R190D1S Datasheet

 

IGT60R190D1S MOSFET. Datasheet pdf. Equivalent

Type Designator: IGT60R190D1S

Marking Code: 60S190D1

Type of Transistor: GaN

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.6 V

Maximum Drain Current |Id|: 12.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.2 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 28 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: HSOF-8-3

IGT60R190D1S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IGT60R190D1S Datasheet (PDF)

0.1. igt60r190d1s.pdf Size:544K _infineon

IGT60R190D1S
IGT60R190D1S

IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching G No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 1 Superior commutation ruggedness 1 1 Qualified for standard grade application

8.1. igt60r070d1.pdf Size:537K _infineon

IGT60R190D1S
IGT60R190D1S

IGT60R070D1IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 Superior commutation ruggedness 1 Qualified for industrial applications according to JE

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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