IGT60R190D1S MOSFET. Datasheet pdf. Equivalent
Type Designator: IGT60R190D1S
Marking Code: 60S190D1
Type of Transistor: GaN
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 55.5 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.6 V
Maximum Drain Current |Id|: 12.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 3.2 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 28 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: HSOF-8-3
IGT60R190D1S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IGT60R190D1S Datasheet (PDF)
0.1. igt60r190d1s.pdf 
Size:544K _infineon
IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching G No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 1 Superior commutation ruggedness 1 1 Qualified for standard grade application
8.1. igt60r070d1.pdf Size:537K _infineon
IGT60R070D1IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 Superior commutation ruggedness 1 Qualified for industrial applications according to JE
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
