All MOSFET. STD1NA60-1 Datasheet

 

STD1NA60-1 Datasheet and Replacement


   Type Designator: STD1NA60-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: IPAK
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STD1NA60-1 Datasheet (PDF)

 ..1. Size:171K  1
std1na60 std1na60-1 std1na60t4.pdf pdf_icon

STD1NA60-1

STD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V

 6.1. Size:171K  st
std1na60.pdf pdf_icon

STD1NA60-1

STD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V

 9.1. Size:280K  st
std1nc60.pdf pdf_icon

STD1NA60-1

STD1NC60N-CHANNEL 600V - 7 - 1.4A - DPAK/IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1NC60 600 V

 9.2. Size:56K  st
std1nb80-1.pdf pdf_icon

STD1NA60-1

STD1NB80-1N - CHANNEL 800V - 16 - 1A - IPAKPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTD1NB80-1 800 V

Datasheet: STD17N05LT4 , STD17N05T4 , STD17N06 , STD17N06-1 , STD17N06L , STD17N06L-1 , STD17N06LT4 , STD17N06T4 , 5N65 , STD1NA60T4 , STD20N06-1 , STD20N06T4 , STD2N50-1 , STD2N50T4 , STD2NA60-1 , STD2NA60T4 , STD3N25-1 .

History: IRFR7740PBF | IRF3708PBF | ME2328 | IRCP254 | IXFH110N10P | RSE002P03TL | R6020KNZ

Keywords - STD1NA60-1 MOSFET datasheet

 STD1NA60-1 cross reference
 STD1NA60-1 equivalent finder
 STD1NA60-1 lookup
 STD1NA60-1 substitution
 STD1NA60-1 replacement

 

 
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