All MOSFET. IPB35N10S3L-26 Datasheet

 

IPB35N10S3L-26 Datasheet and Replacement


   Type Designator: IPB35N10S3L-26
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0263 Ohm
   Package: TO263
 
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IPB35N10S3L-26 Datasheet (PDF)

 ..1. Size:171K  infineon
 ipb35n10s3l-26.pdf pdf_icon

IPB35N10S3L-26

IPB35N10S3L-26OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 26.3mWDS(on),maxI 35 ADFeaturesPG-TO263-3-2 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB35N10S3L-26 PG-TO263-3-2 3N10L26M

 9.1. Size:704K  infineon
 ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPB35N10S3L-26

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

Datasheet: IPB180N08S4-02 , IPB180N10S4-02 , IPB180N10S4-03 , IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 , IPB240N04S4-1R0 , IPB240N04S4-R9 , IRF3710 , IPB50N12S3L-15 , IPB60R040CFD7 , IPB60R045P7 , IPB60R070CFD7 , IPB60R090CFD7 , IPB60R120C7 , IPB60R125CFD7 , IPB60R170CFD7 .

History: UT2316G-AE3-R | 3N80L-TM3-T

Keywords - IPB35N10S3L-26 MOSFET datasheet

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