IPB35N10S3L-26 Datasheet. Specs and Replacement
Type Designator: IPB35N10S3L-26 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0263 Ohm
Package: TO263
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IPB35N10S3L-26 substitution
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IPB35N10S3L-26 datasheet
ipb35n10s3l-26.pdf
IPB35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 26.3 mW DS(on),max I 35 A D Features PG-TO263-3-2 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB35N10S3L-26 PG-TO263-3-2 3N10L26 M... See More ⇒
ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf
IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 34 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 27 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi... See More ⇒
Detailed specifications: IPB180N08S4-02, IPB180N10S4-02, IPB180N10S4-03, IPB180P04P4-03, IPB180P04P4L-02, IPB240N03S4L-R8, IPB240N04S4-1R0, IPB240N04S4-R9, AO3400, IPB50N12S3L-15, IPB60R040CFD7, IPB60R045P7, IPB60R070CFD7, IPB60R090CFD7, IPB60R120C7, IPB60R125CFD7, IPB60R170CFD7
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