All MOSFET. IPC70N04S5-4R6 Datasheet

 

IPC70N04S5-4R6 Datasheet and Replacement


   Type Designator: IPC70N04S5-4R6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TDSON-8-33
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IPC70N04S5-4R6 Datasheet (PDF)

 ..1. Size:394K  infineon
 ipc70n04s5-4r6.pdf pdf_icon

IPC70N04S5-4R6

IPC70N04S5-4R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.6 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:564K  infineon
 ipc70n04s5l-4r2.pdf pdf_icon

IPC70N04S5-4R6

IPC70N04S5L-4R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.2 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AONS62530 | 2N3797 | MMBF5457 | IRF9332TR | 2SK403 | PD648BA | NCEAP40PT15D

Keywords - IPC70N04S5-4R6 MOSFET datasheet

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