All MOSFET. IPC70N04S5-4R6 Datasheet

 

IPC70N04S5-4R6 Datasheet and Replacement


   Type Designator: IPC70N04S5-4R6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TDSON-8-33
 

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IPC70N04S5-4R6 Datasheet (PDF)

 ..1. Size:394K  infineon
 ipc70n04s5-4r6.pdf pdf_icon

IPC70N04S5-4R6

IPC70N04S5-4R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.6 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:564K  infineon
 ipc70n04s5l-4r2.pdf pdf_icon

IPC70N04S5-4R6

IPC70N04S5L-4R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.2 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: IPC100N04S5-1R9 , IPC100N04S5-2R8 , IPC100N04S5L-1R1 , IPC100N04S5L-1R5 , IPC100N04S5L-1R9 , IPC100N04S5L-2R6 , IPC50N04S5-5R8 , IPC50N04S5L-5R5 , K4145 , IPC70N04S5L-4R2 , IPC90N04S5-3R6 , IPC90N04S5L-3R3 , IPD090N03LGE8177 , IPD100N04S4L-02 , IPD25DP06LM , IPD25DP06NM , IPD30N12S3L-31 .

History: AO4476A

Keywords - IPC70N04S5-4R6 MOSFET datasheet

 IPC70N04S5-4R6 cross reference
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