IPD100N04S4L-02 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD100N04S4L-02
Marking Code: 4N04L02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 126 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TO252
IPD100N04S4L-02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD100N04S4L-02 Datasheet (PDF)
ipd100n04s4l-02.pdf
IPD100N04S4L-02OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.9mWID 100 AFeatures OptiMOSTM - power MOSFET for automotive applicationsPG-TO252-3-313 N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp
ipd100n04s4-02.pdf
IPD100N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.0mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD100N04S4-02 PG-TO252-3-313 4N0402Maximum ratin
ipd100n04s4-02.pdf
isc N-Channel MOSFET Transistor IPD100N04S4-02FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R : 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAX
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
