All MOSFET. IPD380P06NM Datasheet

 

IPD380P06NM Datasheet and Replacement


   Type Designator: IPD380P06NM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO252
 

 IPD380P06NM substitution

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IPD380P06NM Datasheet (PDF)

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IPD380P06NM

IPD380P06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke

Datasheet: IPC90N04S5-3R6 , IPC90N04S5L-3R3 , IPD090N03LGE8177 , IPD100N04S4L-02 , IPD25DP06LM , IPD25DP06NM , IPD30N12S3L-31 , IPD35N12S3L-24 , IRFP450 , IPD40DP06NM , IPD50N08S4-13 , IPD50N12S3L-15 , IPD50P04P4-13 , IPD60N10S4-12 , IPD60N10S4L-12 , IPD60R145CFD7 , IPD60R180P7 .

History: SWP056R68E7T | 2SJ377 | TPCP8405 | WSD30140DN56 | HGP155N15S | 2SK3111-S

Keywords - IPD380P06NM MOSFET datasheet

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