IPD380P06NM Specs and Replacement

Type Designator: IPD380P06NM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO252

IPD380P06NM substitution

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IPD380P06NM datasheet

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IPD380P06NM

IPD380P06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke... See More ⇒

Detailed specifications: IPC90N04S5-3R6, IPC90N04S5L-3R3, IPD090N03LGE8177, IPD100N04S4L-02, IPD25DP06LM, IPD25DP06NM, IPD30N12S3L-31, IPD35N12S3L-24, NCEP15T14, IPD40DP06NM, IPD50N08S4-13, IPD50N12S3L-15, IPD50P04P4-13, IPD60N10S4-12, IPD60N10S4L-12, IPD60R145CFD7, IPD60R180P7

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.