IPD50N08S4-13 Datasheet. Specs and Replacement
Type Designator: IPD50N08S4-13 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 511 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
Package: TO252
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IPD50N08S4-13 substitution
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IPD50N08S4-13 datasheet
..1. Size:268K infineon
ipd50n08s4-13.pdf 
IPD50N08S4-13 OptiMOS -T2 Power-Transistor Product Summary VDS 80 V RDS(on),max 13.2 mW ID 50 A Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N08S4-13 PG-TO252-3-313 4N0813 Maximum ratings, ... See More ⇒
7.1. Size:154K 1
ipd50n06s2l-13.pdf
IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark... See More ⇒
7.2. Size:162K infineon
ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf
IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 7.8 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra... See More ⇒
7.3. Size:150K infineon
ipd50n03s2-07.pdf
IPD50N03S2-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel - Enhancement mode R 7.3 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N03S2-07 PG-TO252-... See More ⇒
7.4. Size:151K infineon
ipd50n03s2l-06.pdf
IPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N03S2... See More ⇒
7.5. Size:153K infineon
ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf
IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating... See More ⇒
7.6. Size:153K infineon
ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf
IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 9.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,... See More ⇒
7.7. Size:148K infineon
ipd50n06s2l-13.pdf
IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark... See More ⇒
7.8. Size:154K infineon
ipd50n04s4-08 ds 1 0.pdf
IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,... See More ⇒
7.9. Size:184K infineon
ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf
IPD50N04S3-08 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 7.5 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max... See More ⇒
7.10. Size:149K infineon
ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf
IPD50N06S2-14 Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N06S2-14... See More ⇒
7.11. Size:132K infineon
ipd50n03s4l-06 ipd50n03s4l-06 ds 1 1.pdf
IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 5.5 mW DS(on),max I 50 A D PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N03S4L-06 PG-TO252-3-11 4N03L06 Maximum rat... See More ⇒
7.12. Size:164K infineon
ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf
IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a... See More ⇒
7.13. Size:182K infineon
ipd50n04s3-09 ipd50n04s3-09 ds 1 1.pdf
IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim... See More ⇒
7.14. Size:163K infineon
ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf
IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat... See More ⇒
7.15. Size:824K cn vbsemi
ipd50n06s2-14.pdf
IPD50N06S2-14 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li... See More ⇒
Detailed specifications: IPD090N03LGE8177, IPD100N04S4L-02, IPD25DP06LM, IPD25DP06NM, IPD30N12S3L-31, IPD35N12S3L-24, IPD380P06NM, IPD40DP06NM, AON7410, IPD50N12S3L-15, IPD50P04P4-13, IPD60N10S4-12, IPD60N10S4L-12, IPD60R145CFD7, IPD60R180P7, IPD60R1K0PFD7S, IPD60R1K5PFD7S
Keywords - IPD50N08S4-13 MOSFET specs
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