IPD50N08S4-13 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD50N08S4-13
Marking Code: 4N0813
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 511 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
Package: TO252
IPD50N08S4-13 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD50N08S4-13 Datasheet (PDF)
ipd50n08s4-13.pdf
IPD50N08S4-13OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 13.2mWID 50 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N08S4-13 PG-TO252-3-313 4N0813Maximum ratings,
ipd50n06s2l-13.pdf
IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark
ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf
IPD50N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 7.8mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-08 PG-TO252-3-11 4N06L08Maximum ra
ipd50n03s2-07.pdf
IPD50N03S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 7.3mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N03S2-07 PG-TO252-
ipd50n03s2l-06.pdf
IPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 6.4mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N03S2
ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf
IPD50N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N04L08Maximum rating
ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf
IPD50N04S4-10OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 9.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-10 PG-TO252-3-313 4N0410Maximum ratings,
ipd50n06s2l-13.pdf
IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark
ipd50n04s4-08 ds 1 0.pdf
IPD50N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N0408Maximum ratings,
ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf
IPD50N04S3-08OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 7.5mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-08 PG-TO252-3-11 3N0408Max
ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf
IPD50N06S2-14 Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.4mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N06S2-14
ipd50n03s4l-06 ipd50n03s4l-06 ds 1 1.pdf
IPD50N03S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 5.5mWDS(on),maxI 50 ADPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N03S4L-06 PG-TO252-3-11 4N03L06Maximum rat
ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf
IPD50N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 9.0mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4-09 PG-TO252-3-11 4N0609Maximum ratings, a
ipd50n04s3-09 ipd50n04s3-09 ds 1 1.pdf
IPD50N04S3-09OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-09 PG-TO252-3-11 3N0409Maxim
ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf
IPD50N06S4L-12OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 12mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-12 PG-TO252-3-11 4N06L12Maximum rat
ipd50n06s2-14.pdf
IPD50N06S2-14www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Li
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STU624S
