IPD85P04P4-07 Specs and Replacement

Type Designator: IPD85P04P4-07

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm

Package: TO252

IPD85P04P4-07 substitution

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IPD85P04P4-07 datasheet

 ..1. Size:149K  infineon
 ipd85p04p4-07.pdf pdf_icon

IPD85P04P4-07

IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 7.3 mW DS(on) I -85 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD85P04P4-07 PG-TO252-3-313 4P0407 Maxim... See More ⇒

 4.1. Size:279K  infineon
 ipd85p04p4l-06.pdf pdf_icon

IPD85P04P4-07

IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 6.4 mW ID -85 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pin... See More ⇒

Detailed specifications: IPD80R2K7C3A, IPD80R360P7, IPD80R3K3P7, IPD80R450P7, IPD80R4K5P7, IPD80R600P7, IPD80R750P7, IPD80R900P7, IRFB7545, IPD85P04P4L-06, IPD900P06NM, IPD90N08S4-05, IPD90N10S4-06, IPD90N10S4L-06, IPD90P04P4L-04, IPD95R1K2P7, IPD95R450P7

Keywords - IPD85P04P4-07 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.