IPD85P04P4L-06 PDF Specs and Replacement
Type Designator: IPD85P04P4L-06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: TO252
IPD85P04P4L-06 substitution
IPD85P04P4L-06 PDF Specs
ipd85p04p4l-06.pdf
IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 6.4 mW ID -85 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pin... See More ⇒
ipd85p04p4-07.pdf
IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 7.3 mW DS(on) I -85 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD85P04P4-07 PG-TO252-3-313 4P0407 Maxim... See More ⇒
Detailed specifications: IPD80R360P7 , IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 , IPD80R750P7 , IPD80R900P7 , IPD85P04P4-07 , AON7403 , IPD900P06NM , IPD90N08S4-05 , IPD90N10S4-06 , IPD90N10S4L-06 , IPD90P04P4L-04 , IPD95R1K2P7 , IPD95R450P7 , IPD95R750P7 .
Keywords - IPD85P04P4L-06 MOSFET specs
IPD85P04P4L-06 cross reference
IPD85P04P4L-06 equivalent finder
IPD85P04P4L-06 pdf lookup
IPD85P04P4L-06 substitution
IPD85P04P4L-06 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs




