IPD85P04P4L-06 PDF and Equivalents Search

 

IPD85P04P4L-06 PDF Specs and Replacement


   Type Designator: IPD85P04P4L-06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: TO252
 

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IPD85P04P4L-06 PDF Specs

 ..1. Size:279K  infineon
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IPD85P04P4L-06

IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 6.4 mW ID -85 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pin... See More ⇒

 4.1. Size:149K  infineon
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IPD85P04P4L-06

IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 7.3 mW DS(on) I -85 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD85P04P4-07 PG-TO252-3-313 4P0407 Maxim... See More ⇒

Detailed specifications: IPD80R360P7 , IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 , IPD80R750P7 , IPD80R900P7 , IPD85P04P4-07 , AON7403 , IPD900P06NM , IPD90N08S4-05 , IPD90N10S4-06 , IPD90N10S4L-06 , IPD90P04P4L-04 , IPD95R1K2P7 , IPD95R450P7 , IPD95R750P7 .

Keywords - IPD85P04P4L-06 MOSFET specs

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