All MOSFET. IPD85P04P4L-06 Datasheet


IPD85P04P4L-06 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD85P04P4L-06

Marking Code: 4P04L06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 85 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 80 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 1520 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0064 Ohm

Package: TO252

IPD85P04P4L-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IPD85P04P4L-06 Datasheet (PDF)

0.1. ipd85p04p4l-06.pdf Size:279K _infineon


IPD85P04P4L-06OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) 6.4mWID -85 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflowTab 175C operating temperature Green package (RoHS compliant)13 100% Avalanche testedSourcepin 3Gatepin 1Type Package Marking Drainpin

4.1. ipd85p04p4-07.pdf Size:149K _infineon


IPD85P04P4-07OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 7.3mWDS(on)I -85 ADFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD85P04P4-07 PG-TO252-3-313 4P0407Maxim


Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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