All MOSFET. IPD85P04P4L-06 Datasheet

 

IPD85P04P4L-06 Datasheet and Replacement


   Type Designator: IPD85P04P4L-06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: TO252
 

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IPD85P04P4L-06 Datasheet (PDF)

 ..1. Size:279K  infineon
 ipd85p04p4l-06.pdf pdf_icon

IPD85P04P4L-06

IPD85P04P4L-06OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) 6.4mWID -85 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflowTab 175C operating temperature Green package (RoHS compliant)13 100% Avalanche testedSourcepin 3Gatepin 1Type Package Marking Drainpin

 4.1. Size:149K  infineon
 ipd85p04p4-07.pdf pdf_icon

IPD85P04P4L-06

IPD85P04P4-07OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 7.3mWDS(on)I -85 ADFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD85P04P4-07 PG-TO252-3-313 4P0407Maxim

Datasheet: IPD80R360P7 , IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 , IPD80R750P7 , IPD80R900P7 , IPD85P04P4-07 , HY1906P , IPD900P06NM , IPD90N08S4-05 , IPD90N10S4-06 , IPD90N10S4L-06 , IPD90P04P4L-04 , IPD95R1K2P7 , IPD95R450P7 , IPD95R750P7 .

History: PMPB19XP | WMS17P03TS

Keywords - IPD85P04P4L-06 MOSFET datasheet

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