All MOSFET. IPG16N10S4-61A Datasheet

 

IPG16N10S4-61A Datasheet and Replacement


   Type Designator: IPG16N10S4-61A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TDSON-8-10
 

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IPG16N10S4-61A Datasheet (PDF)

 ..1. Size:195K  infineon
 ipg16n10s4-61a.pdf pdf_icon

IPG16N10S4-61A

IPG16N10S4-61AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max3) 61mID 16 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 4.1. Size:269K  infineon
 ipg16n10s4l-61a.pdf pdf_icon

IPG16N10S4-61A

IPG16N10S4L-61AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max3) 61mWID 16 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

Datasheet: IPD95R450P7 , IPD95R750P7 , IPDD60R050G7 , IPDD60R080G7 , IPDD60R125G7 , IPDD60R150G7 , IPF060N03LG , IPF075N03LG , 20N60 , IPG16N10S4L-61A , IPG20N04S4-18A , IPG20N04S4L-07A , IPG20N04S4L-18A , IPG20N06S2L-50A , IPG20N06S2L-65A , IPG20N06S4L-11A , IPG20N06S4L-26A .

History: MEE4294K

Keywords - IPG16N10S4-61A MOSFET datasheet

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