All MOSFET. IPG16N10S4-61A Datasheet

 

IPG16N10S4-61A Datasheet and Replacement


   Type Designator: IPG16N10S4-61A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TDSON-8-10
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IPG16N10S4-61A Datasheet (PDF)

 ..1. Size:195K  infineon
 ipg16n10s4-61a.pdf pdf_icon

IPG16N10S4-61A

IPG16N10S4-61AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max3) 61mID 16 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 4.1. Size:269K  infineon
 ipg16n10s4l-61a.pdf pdf_icon

IPG16N10S4-61A

IPG16N10S4L-61AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max3) 61mWID 16 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK113Y | LSE50R160HT | KNF7650A | STK801 | SFU2955 | ITF87008DQT | MEE4294HP-G

Keywords - IPG16N10S4-61A MOSFET datasheet

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