IPG20N04S4-18A Specs and Replacement

Type Designator: IPG20N04S4-18A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 0.4 nS

Cossⓘ - Output Capacitance: 176 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0184 Ohm

Package: TDSON-8-10

IPG20N04S4-18A substitution

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IPG20N04S4-18A datasheet

 ..1. Size:516K  infineon
 ipg20n04s4-18a.pdf pdf_icon

IPG20N04S4-18A

IPG20N04S4-18A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on),max4) 18 mW ID 2) 20 A Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 1 100% Avalanche tested 8 7 6 5 Feasible for automatic optical inspe... See More ⇒

 2.1. Size:159K  infineon
 ipg20n04s4-12 ipg20n04s4-12 ds 1 0.pdf pdf_icon

IPG20N04S4-18A

IPG20N04S4-12 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 12.2 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4-12 PG-TDSON-8-4 ... See More ⇒

 3.1. Size:157K  infineon
 ipg20n04s4-08 ipg20n04s4-08 ds 1 0.pdf pdf_icon

IPG20N04S4-18A

IPG20N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 7.6 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4-08 PG-TDSON-8-4 4... See More ⇒

 3.2. Size:141K  infineon
 ipg20n04s4-09 ipg20n04s4-09 ds 1 0.pdf pdf_icon

IPG20N04S4-18A

IPG20N04S4-09 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 8.6 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4-09 PG-TDSON-8-4 4... See More ⇒

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Detailed specifications: IPDD60R050G7, IPDD60R080G7, IPDD60R125G7, IPDD60R150G7, IPF060N03LG, IPF075N03LG, IPG16N10S4-61A, IPG16N10S4L-61A, IRF540, IPG20N04S4L-07A, IPG20N04S4L-18A, IPG20N06S2L-50A, IPG20N06S2L-65A, IPG20N06S4L-11A, IPG20N06S4L-26A, IPG20N10S4-36A, IPG20N10S4L-22

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