IPG20N04S4-18A - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPG20N04S4-18A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 26 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 0.4 ns
Cossⓘ - Выходная емкость: 176 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0184 Ohm
Тип корпуса: TDSON-8-10
Аналог (замена) для IPG20N04S4-18A
IPG20N04S4-18A Datasheet (PDF)
ipg20n04s4-18a.pdf

IPG20N04S4-18AOptiMOS-T2 Power-TransistorProduct SummaryVDS40 VRDS(on),max4)18mWID 2)20 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant)1 100% Avalanche tested8 7 6 5 Feasible for automatic optical inspe
ipg20n04s4-12 ipg20n04s4-12 ds 1 0.pdf

IPG20N04S4-12OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDS4)12.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N04S4-12 PG-TDSON-8-4
ipg20n04s4-08 ipg20n04s4-08 ds 1 0.pdf

IPG20N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDS4)7.6mWRDS(on),maxI 20 ADFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N04S4-08 PG-TDSON-8-4 4
ipg20n04s4-09 ipg20n04s4-09 ds 1 0.pdf

IPG20N04S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDS4)8.6mWRDS(on),maxI 20 ADFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N04S4-09 PG-TDSON-8-4 4
Другие MOSFET... IPDD60R050G7 , IPDD60R080G7 , IPDD60R125G7 , IPDD60R150G7 , IPF060N03LG , IPF075N03LG , IPG16N10S4-61A , IPG16N10S4L-61A , IRF540 , IPG20N04S4L-07A , IPG20N04S4L-18A , IPG20N06S2L-50A , IPG20N06S2L-65A , IPG20N06S4L-11A , IPG20N06S4L-26A , IPG20N10S4-36A , IPG20N10S4L-22 .
History: MTDN1034C6 | IPG16N10S4L-61A | HRU180N10K | SVG10120NADTR | CEM8435A | MTDN3018S6R | SSM6K31FE
History: MTDN1034C6 | IPG16N10S4L-61A | HRU180N10K | SVG10120NADTR | CEM8435A | MTDN3018S6R | SSM6K31FE



Список транзисторов
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