IPLU250N04S4-1R7 Datasheet. Specs and Replacement

Type Designator: IPLU250N04S4-1R7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: H-PSOF-8-1

IPLU250N04S4-1R7 substitution

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IPLU250N04S4-1R7 datasheet

 0.1. Size:285K  infineon
 iplu250n04s4-1r7.pdf pdf_icon

IPLU250N04S4-1R7

IPLU250N04S4-1R7 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.7 mW ID 250 A Features H-PSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260 C peak reflow 1 Tab 175 C operating temperature Green product (RoHS compliant); 100% lead free 1 8 Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPL... See More ⇒

Detailed specifications: IPL60R075CFD7, IPL60R085P7, IPL60R095CFD7, IPL60R125P7, IPL60R160CFD7, IPL60R185C7, IPL60R185P7, IPL60R225CFD7, 13N50, IPLU300N04S4-1R1, IPLU300N04S4-R8, IPN50R1K4CE, IPN50R3K0CE, IPN50R650CE, IPN50R800CE, IPN60R1K0PFD7S, IPN60R1K5CE

Keywords - IPLU250N04S4-1R7 MOSFET specs

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