All MOSFET. IPLU250N04S4-1R7 Datasheet

 

IPLU250N04S4-1R7 Datasheet and Replacement


   Type Designator: IPLU250N04S4-1R7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: H-PSOF-8-1
 

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IPLU250N04S4-1R7 Datasheet (PDF)

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IPLU250N04S4-1R7

IPLU250N04S4-1R7OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.7mWID 250 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1Tab 175C operating temperature Green product (RoHS compliant); 100% lead free18 Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPL

Datasheet: IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , AO4407 , IPLU300N04S4-1R1 , IPLU300N04S4-R8 , IPN50R1K4CE , IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE .

History: IPN50R3K0CE

Keywords - IPLU250N04S4-1R7 MOSFET datasheet

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