IPLU300N04S4-1R1 PDF and Equivalents Search

 

IPLU300N04S4-1R1 Specs and Replacement


   Type Designator: IPLU300N04S4-1R1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 2070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: H-PSOF-8-1
 

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IPLU300N04S4-1R1 datasheet

 0.1. Size:280K  infineon
 iplu300n04s4-1r1.pdf pdf_icon

IPLU300N04S4-1R1

IPLU300N04S4-1R1 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.15 mW ID 300 A Features H-PSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260 C peak reflow 1 Tab 175 C operating temperature Green product (RoHS compliant); 100% lead free 1 8 Ultra low Rds(on) 100% Avalanche tested Type Package Marking IP... See More ⇒

 1.1. Size:283K  infineon
 iplu300n04s4-r8.pdf pdf_icon

IPLU300N04S4-1R1

IPLU300N04S4-R8 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.77 mW ID 300 A Features H-PSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260 C peak reflow 1 175 C operating temperature Tab Green product (RoHS compliant); 100% lead free 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IPLU... See More ⇒

Detailed specifications: IPL60R085P7 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , IPLU250N04S4-1R7 , AON7410 , IPLU300N04S4-R8 , IPN50R1K4CE , IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S .

Keywords - IPLU300N04S4-1R1 MOSFET specs

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