IPLU300N04S4-1R1 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPLU300N04S4-1R1
Marking Code: 4N041R1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 300 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 116 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 2070 pF
Maximum Drain-Source On-State Resistance (Rds): 0.00115 Ohm
Package: H-PSOF-8-1
IPLU300N04S4-1R1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPLU300N04S4-1R1 Datasheet (PDF)
0.1. iplu300n04s4-1r1.pdf 
Size:280K _infineon
IPLU300N04S4-1R1OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.15mWID 300 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1Tab 175C operating temperature Green product (RoHS compliant); 100% lead free18 Ultra low Rds(on) 100% Avalanche testedType Package MarkingIP
1.1. iplu300n04s4-r8.pdf Size:283K _infineon
IPLU300N04S4-R8OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.77mWID 300 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1 175C operating temperature Tab Green product (RoHS compliant); 100% lead free1 Ultra low Rds(on)8 100% Avalanche testedType Package MarkingIPLU
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