All MOSFET. IPLU300N04S4-R8 Datasheet

 

IPLU300N04S4-R8 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPLU300N04S4-R8

Marking Code: 4N04R8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 429 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 300 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 221 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 3790 pF

Maximum Drain-Source On-State Resistance (Rds): 0.00077 Ohm

Package: H-PSOF-8-1

IPLU300N04S4-R8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPLU300N04S4-R8 Datasheet (PDF)

0.1. iplu300n04s4-r8.pdf Size:283K _infineon

IPLU300N04S4-R8
IPLU300N04S4-R8

IPLU300N04S4-R8OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.77mWID 300 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1 175C operating temperature Tab Green product (RoHS compliant); 100% lead free1 Ultra low Rds(on)8 100% Avalanche testedType Package MarkingIPLU

1.1. iplu300n04s4-1r1.pdf Size:280K _infineon

IPLU300N04S4-R8
IPLU300N04S4-R8

IPLU300N04S4-1R1OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.15mWID 300 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1Tab 175C operating temperature Green product (RoHS compliant); 100% lead free18 Ultra low Rds(on) 100% Avalanche testedType Package MarkingIP

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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