All MOSFET. IPLU300N04S4-R8 Datasheet

 

IPLU300N04S4-R8 Datasheet and Replacement


   Type Designator: IPLU300N04S4-R8
   Marking Code: 4N04R8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 221 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 3790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00077 Ohm
   Package: H-PSOF-8-1
 

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IPLU300N04S4-R8 Datasheet (PDF)

 0.1. Size:283K  infineon
 iplu300n04s4-r8.pdf pdf_icon

IPLU300N04S4-R8

IPLU300N04S4-R8OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.77mWID 300 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1 175C operating temperature Tab Green product (RoHS compliant); 100% lead free1 Ultra low Rds(on)8 100% Avalanche testedType Package MarkingIPLU

 1.1. Size:280K  infineon
 iplu300n04s4-1r1.pdf pdf_icon

IPLU300N04S4-R8

IPLU300N04S4-1R1OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.15mWID 300 AFeaturesH-PSOF-8-1 N-channel - Enhancement modeTab AEC qualified8 MSL1 up to 260C peak reflow1Tab 175C operating temperature Green product (RoHS compliant); 100% lead free18 Ultra low Rds(on) 100% Avalanche testedType Package MarkingIP

Datasheet: IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , IPLU250N04S4-1R7 , IPLU300N04S4-1R1 , 4N60 , IPN50R1K4CE , IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S , IPN60R360P7S .

Keywords - IPLU300N04S4-R8 MOSFET datasheet

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