IPLU300N04S4-R8 Specs and Replacement
Type Designator: IPLU300N04S4-R8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 3790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00077 Ohm
Package: H-PSOF-8-1
IPLU300N04S4-R8 substitution
IPLU300N04S4-R8 Specs
iplu300n04s4-r8.pdf
IPLU300N04S4-R8 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.77 mW ID 300 A Features H-PSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260 C peak reflow 1 175 C operating temperature Tab Green product (RoHS compliant); 100% lead free 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IPLU... See More ⇒
iplu300n04s4-1r1.pdf
IPLU300N04S4-1R1 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.15 mW ID 300 A Features H-PSOF-8-1 N-channel - Enhancement mode Tab AEC qualified 8 MSL1 up to 260 C peak reflow 1 Tab 175 C operating temperature Green product (RoHS compliant); 100% lead free 1 8 Ultra low Rds(on) 100% Avalanche tested Type Package Marking IP... See More ⇒
Detailed specifications: IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , IPLU250N04S4-1R7 , IPLU300N04S4-1R1 , 12N60 , IPN50R1K4CE , IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S , IPN60R360P7S .
Keywords - IPLU300N04S4-R8 MOSFET specs
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IPLU300N04S4-R8 replacement
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