IPN65R1K5CE Datasheet. Specs and Replacement

Type Designator: IPN65R1K5CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT223

IPN65R1K5CE substitution

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IPN65R1K5CE datasheet

 ..1. Size:1057K  infineon
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IPN65R1K5CE

IPN65R1K5CE MOSFET PG-SOT223 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

Detailed specifications: IPN60R1K0PFD7S, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S, IPN60R3K4CE, IPN60R600P7S, IPN60R600PFD7S, BS170, IPN70R1K0CE, IPN70R1K2P7S, IPN70R1K4P7S, IPN70R1K5CE, IPN70R2K0P7S, IPN70R2K1CE, IPN70R360P7S, IPN70R600P7S

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