IPN65R1K5CE MOSFET. Datasheet pdf. Equivalent
Type Designator: IPN65R1K5CE
Marking Code: 65S1K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 5.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 5.9 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT223
IPN65R1K5CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPN65R1K5CE Datasheet (PDF)
ipn65r1k5ce.pdf
IPN65R1K5CEMOSFETPG-SOT223650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high
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