All MOSFET. STD4N25-1 Datasheet

 

STD4N25-1 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD4N25-1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: IPAK

STD4N25-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD4N25-1 Datasheet (PDF)

0.1. std4n25 std4n25-1 std4n25t4.pdf Size:142K _1

STD4N25-1
STD4N25-1

STD4N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTD4N25 250 V

7.1. std4n25.pdf Size:142K _st

STD4N25-1
STD4N25-1

STD4N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTD4N25 250 V

 8.1. std4n20.pdf Size:271K _st

STD4N25-1
STD4N25-1

STD4N20N-CHANNEL 200V - 1.2 - 4A DPAK/IPAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTD4N20 200 V

Datasheet: STD3N25T4 , STD3N30-1 , STD3N30L , STD3N30L-1 , STD3N30LT4 , STD3N30T4 , STD3NA50-1 , STD3NA50T4 , IRF640 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , STD6N10T4 , STD8N06-1 .

 

 
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