STD4N25-1 - аналоги, параметры транзистора - Справочник транзисторов

STD4N25-1. Аналоги и основные параметры

Наименование производителя: STD4N25-1

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 85 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm

Тип корпуса: IPAK

Аналог (замена) для STD4N25-1

- подборⓘ MOSFET транзистора по параметрам

STD4N25-1 даташит

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