All MOSFET. IPN95R3K7P7 Datasheet

 

IPN95R3K7P7 Datasheet and Replacement


   Type Designator: IPN95R3K7P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
   Package: SOT223
 

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IPN95R3K7P7 Datasheet (PDF)

 ..1. Size:1140K  infineon
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IPN95R3K7P7

IPN95R3K7P7MOSFETPG-SOT223950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

Datasheet: IPN70R900P7S , IPN80R1K2P7 , IPN80R1K4P7 , IPN80R2K4P7 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , AO3401 , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , IPP120N10S4-05 , IPP120P04P4-04 , IPP120P04P4L-03 .

History: RU4H10P | IPI80N06S3-07 | SIRA14DP | HSBA3062 | NCE30P50G | NTTFS5C680NL | SSB20N60S

Keywords - IPN95R3K7P7 MOSFET datasheet

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