IPN95R3K7P7 Datasheet and Replacement
Type Designator: IPN95R3K7P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: SOT223
IPN95R3K7P7 substitution
IPN95R3K7P7 Datasheet (PDF)
ipn95r3k7p7.pdf

IPN95R3K7P7MOSFETPG-SOT223950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
Datasheet: IPN70R900P7S , IPN80R1K2P7 , IPN80R1K4P7 , IPN80R2K4P7 , IPN80R4K5P7 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , MMIS60R580P , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , IPP120N10S4-05 , IPP120P04P4-04 , IPP120P04P4L-03 .
History: IPP120N10S4-03 | CEU655 | BRCS065N08SHZC | HRLP150N10K | CEU740A | PMZ390UN | FQD17N08LTM
Keywords - IPN95R3K7P7 MOSFET datasheet
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IPN95R3K7P7 replacement
History: IPP120N10S4-03 | CEU655 | BRCS065N08SHZC | HRLP150N10K | CEU740A | PMZ390UN | FQD17N08LTM



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