IPN95R3K7P7 Datasheet. Specs and Replacement

Type Designator: IPN95R3K7P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm

Package: SOT223

IPN95R3K7P7 substitution

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IPN95R3K7P7 datasheet

 ..1. Size:1140K  infineon
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IPN95R3K7P7

IPN95R3K7P7 MOSFET PG-SOT223 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒

Detailed specifications: IPN70R900P7S, IPN80R1K2P7, IPN80R1K4P7, IPN80R2K4P7, IPN80R4K5P7, IPN80R600P7, IPN80R750P7, IPN80R900P7, P60NF06, IPP015N04N6, IPP100N12S3-05, IPP120N08S4-03, IPP120N08S4-04, IPP120N10S4-03, IPP120N10S4-05, IPP120P04P4-04, IPP120P04P4L-03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.