STD4NA40-1 Datasheet. Specs and Replacement

Type Designator: STD4NA40-1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: IPAK

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STD4NA40-1 substitution

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STD4NA40-1 datasheet

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std4na40 std4na40-1 std4na40t4.pdf pdf_icon

STD4NA40-1

STD4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD4NA40 400 V ... See More ⇒

 6.1. Size:169K  st
std4na40.pdf pdf_icon

STD4NA40-1

STD4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD4NA40 400 V ... See More ⇒

 9.1. Size:142K  1
std4n25 std4n25-1 std4n25t4.pdf pdf_icon

STD4NA40-1

STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D STD4N25 250 V ... See More ⇒

 9.2. Size:610K  st
std4nk100z.pdf pdf_icon

STD4NA40-1

STD4NK100Z N-channel 1000 V, 5.6 , 2.2 A SuperMESH Power MOSFET Zener-protected in DPAK package Datasheet preliminary data Features Order code VDSS RDS(on)max ID STD4NK100Z 1000 V ... See More ⇒

Detailed specifications: STD3N30L, STD3N30L-1, STD3N30LT4, STD3N30T4, STD3NA50-1, STD3NA50T4, STD4N25-1, STD4N25T4, IRFB4110, STD4NA40T4, STD5N20-1, STD5N20T4, STD6N10-1, STD6N10T4, STD8N06-1, STD8N06T4, STD8N10

Keywords - STD4NA40-1 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs