All MOSFET. STD4NA40-1 Datasheet

 

STD4NA40-1 Datasheet and Replacement


   Type Designator: STD4NA40-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: IPAK
 

 STD4NA40-1 substitution

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STD4NA40-1 Datasheet (PDF)

 ..1. Size:169K  1
std4na40 std4na40-1 std4na40t4.pdf pdf_icon

STD4NA40-1

STD4NA40N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD4NA40 400 V

 6.1. Size:169K  st
std4na40.pdf pdf_icon

STD4NA40-1

STD4NA40N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD4NA40 400 V

 9.1. Size:142K  1
std4n25 std4n25-1 std4n25t4.pdf pdf_icon

STD4NA40-1

STD4N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTD4N25 250 V

 9.2. Size:610K  st
std4nk100z.pdf pdf_icon

STD4NA40-1

STD4NK100ZN-channel 1000 V, 5.6 , 2.2 A SuperMESH Power MOSFET Zener-protected in DPAK packageDatasheet preliminary dataFeaturesOrder code VDSS RDS(on)max IDSTD4NK100Z 1000 V

Datasheet: STD3N30L , STD3N30L-1 , STD3N30LT4 , STD3N30T4 , STD3NA50-1 , STD3NA50T4 , STD4N25-1 , STD4N25T4 , IRFZ44 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , STD6N10T4 , STD8N06-1 , STD8N06T4 , STD8N10 .

History: SM4514NHKP | MPVA13N50F | STH8NA60

Keywords - STD4NA40-1 MOSFET datasheet

 STD4NA40-1 cross reference
 STD4NA40-1 equivalent finder
 STD4NA40-1 lookup
 STD4NA40-1 substitution
 STD4NA40-1 replacement

 

 
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