All MOSFET. IPT111N20NFD Datasheet

 

IPT111N20NFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPT111N20NFD
   Marking Code: 111N20NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm
   Package: HSOF-8

 IPT111N20NFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPT111N20NFD Datasheet (PDF)

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 ipt111n20nfd.pdf

IPT111N20NFD IPT111N20NFD

IPT111N20NFDMOSFETHSOFOptiMOS3 Power-Transistor, 200 VFeaturesTab N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness1 Very low on-resistance R 2DS(on)345 175 C operating temperature678 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application H

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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