IPT111N20NFD Datasheet. Specs and Replacement

Type Designator: IPT111N20NFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm

Package: HSOF-8

IPT111N20NFD substitution

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IPT111N20NFD datasheet

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IPT111N20NFD

IPT111N20NFD MOSFET HSOF OptiMOS 3 Power-Transistor, 200 V Features Tab N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness 1 Very low on-resistance R 2 DS(on) 3 4 5 175 C operating temperature 6 7 8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application H... See More ⇒

Detailed specifications: IPSA70R600CE, IPSA70R600P7S, IPSA70R750P7S, IPSA70R900P7S, IPT012N06N, IPT019N08N5, IPT026N10N5, IPT029N08N5, IRLB4132, IPT210N25NFD, IPT60R022S7, IPT60R028G7, IPT60R040S7, IPT60R050G7, IPT60R065S7, IPT60R102G7, IPT60R150G7

Keywords - IPT111N20NFD MOSFET specs

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