All MOSFET. IPT111N20NFD Datasheet

 

IPT111N20NFD Datasheet and Replacement


   Type Designator: IPT111N20NFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm
   Package: HSOF-8
 

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IPT111N20NFD Datasheet (PDF)

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IPT111N20NFD

IPT111N20NFDMOSFETHSOFOptiMOS3 Power-Transistor, 200 VFeaturesTab N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness1 Very low on-resistance R 2DS(on)345 175 C operating temperature678 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application H

Datasheet: IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N , IPT019N08N5 , IPT026N10N5 , IPT029N08N5 , 5N60 , IPT210N25NFD , IPT60R022S7 , IPT60R028G7 , IPT60R040S7 , IPT60R050G7 , IPT60R065S7 , IPT60R102G7 , IPT60R150G7 .

History: CEU01N65A | DMN5L06DMKQ | NX138BKW | GSM9435WS | AFN04N60T220FT | TPM7002BKM | QM6016F

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