IPU95R450P7 Datasheet. Specs and Replacement

Type Designator: IPU95R450P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO251

IPU95R450P7 substitution

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IPU95R450P7 datasheet

 ..1. Size:1384K  infineon
 ipu95r450p7.pdf pdf_icon

IPU95R450P7

IPU95R450P7 MOSFET IPAK 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒

 8.1. Size:1366K  infineon
 ipu95r750p7.pdf pdf_icon

IPU95R450P7

IPU95R750P7 MOSFET IPAK 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒

Detailed specifications: IPT65R033G7, IPT65R105G7, IPT65R195G7, IPU80R1K4P7, IPU80R2K0P7, IPU80R2K4P7, IPU80R600P7, IPU80R750P7, NCEP15T14, IPU95R750P7, IPW60R024CFD7, IPW60R031CFD7, IPW60R037CSFD, IPW60R040CFD7, IPW60R045P7, IPW60R090CFD7, IPW60R105CFD7

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