IPU95R450P7 Datasheet and Replacement
Type Designator: IPU95R450P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO251
IPU95R450P7 substitution
IPU95R450P7 Datasheet (PDF)
ipu95r450p7.pdf

IPU95R450P7MOSFETIPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
ipu95r750p7.pdf

IPU95R750P7MOSFETIPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o
Datasheet: IPT65R033G7 , IPT65R105G7 , IPT65R195G7 , IPU80R1K4P7 , IPU80R2K0P7 , IPU80R2K4P7 , IPU80R600P7 , IPU80R750P7 , IRFP450 , IPU95R750P7 , IPW60R024CFD7 , IPW60R031CFD7 , IPW60R037CSFD , IPW60R040CFD7 , IPW60R045P7 , IPW60R090CFD7 , IPW60R105CFD7 .
History: FTU06N70C
Keywords - IPU95R450P7 MOSFET datasheet
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History: FTU06N70C



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