IPW80R280P7 Datasheet. Specs and Replacement
Type Designator: IPW80R280P7 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO247
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IPW80R280P7 substitution
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IPW80R280P7 datasheet
ipw80r280p7.pdf
IPW80R280P7 MOSFET PG-TO 247-3 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D... See More ⇒
ipw80r290c3a.pdf
IPW80R290C3A CoolMOS Power Transistor Product Summary V 800 V DS R 0.29 DS(on)max Q 91 nC g,typ Features New revolutionary high voltage technology PG-TO247-3 Ultra low gate charge and ultra low effective capacitances Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified RoHS compliant CoolMOS C3A designed for DC/DC c... See More ⇒
ipw80r360p7.pdf
IPW80R360P7 MOSFET PG-TO 247-3 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D... See More ⇒
Detailed specifications: IPW60R031CFD7, IPW60R037CSFD, IPW60R040CFD7, IPW60R045P7, IPW60R090CFD7, IPW60R105CFD7, IPW60R125CFD7, IPW60R180P7, IRF2807, IPW80R290C3A, IPW80R360P7, IPZ40N04S5-3R1, IPZ40N04S5-5R4, IPZ40N04S5-8R4, IPZ40N04S5L-7R4, IPZ60R060C7, IPZ60R070P6
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