IPW80R280P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW80R280P7
Marking Code: 80R280P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO247
IPW80R280P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW80R280P7 Datasheet (PDF)
ipw80r280p7.pdf
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ipw80r290c3a.pdf
IPW80R290C3ACoolMOS Power TransistorProduct SummaryV 800 VDSR 0.29DS(on)maxQ 91 nCg,typFeatures New revolutionary high voltage technologyPG-TO247-3 Ultra low gate charge and ultra low effective capacitances Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified RoHS compliantCoolMOS C3A designed for: DC/DC c
ipw80r360p7.pdf
IPW80R360P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
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