IPW80R360P7 Datasheet and Replacement
Type Designator: IPW80R360P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO247
IPW80R360P7 substitution
IPW80R360P7 Datasheet (PDF)
ipw80r360p7.pdf

IPW80R360P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
ipw80r290c3a.pdf

IPW80R290C3ACoolMOS Power TransistorProduct SummaryV 800 VDSR 0.29DS(on)maxQ 91 nCg,typFeatures New revolutionary high voltage technologyPG-TO247-3 Ultra low gate charge and ultra low effective capacitances Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified RoHS compliantCoolMOS C3A designed for: DC/DC c
ipw80r280p7.pdf

IPW80R280P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
Datasheet: IPW60R040CFD7 , IPW60R045P7 , IPW60R090CFD7 , IPW60R105CFD7 , IPW60R125CFD7 , IPW60R180P7 , IPW80R280P7 , IPW80R290C3A , SKD502T , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 , IPZ60R060C7 , IPZ60R070P6 , IPZA60R037P7 , IPZA60R045P7 .
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