All MOSFET. IPZ40N04S5-8R4 Datasheet

 

IPZ40N04S5-8R4 Datasheet and Replacement


   Type Designator: IPZ40N04S5-8R4
   Marking Code: 5N0484
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 10.3 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TSDSON-8-32
 

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IPZ40N04S5-8R4 Datasheet (PDF)

 ..1. Size:323K  infineon
 ipz40n04s5-8r4.pdf pdf_icon

IPZ40N04S5-8R4

IPZ40N04S5-8R4OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 8.4mWID 40 AFeaturesPG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified1 MSL1 up to 260C peak reflow 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 3.1. Size:317K  infineon
 ipz40n04s5-5r4.pdf pdf_icon

IPZ40N04S5-8R4

IPZ40N04S5-5R4OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 5.4mWID 40 AFeaturesPG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified1 MSL1 up to 260C peak reflow 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 3.2. Size:311K  infineon
 ipz40n04s5-3r1.pdf pdf_icon

IPZ40N04S5-8R4

IPZ40N04S5-3R1OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 3.1mWID 40 AFeaturesPG-TSDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified1 MSL1 up to 260C peak reflow 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 4.1. Size:325K  infineon
 ipz40n04s5l-7r4.pdf pdf_icon

IPZ40N04S5-8R4

IPZ40N04S5L-7R4OptiMOS-5 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 7.4mWID 40 AFeaturesPG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified1 MSL1 up to 260C peak reflow 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

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